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CHA8100 rohs compliant ref. : dsCHA81000069 - 10 mar 10 1/12 specification s subject to change without notice united monolithic semiconductors s.a.s. route dpartementale 128 - b.p.46 - 91401 orsay cede x france tel. : +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 33 03 09 x-band hbt high power amplifier gaas monolithic microwave ic description the CHA8100 chip is a monolithic two- stage high power amplifier designed for x band applications. the hpa provides typically 11w output power, 40% power added efficiency and a high robustness on mismatched output. moreover it includes: an analogue biasing circuit that makes it less sensitive to spread and chip environment. an integrated ttl interface that enables to switch the hpa with a current consumption lower than 1ma the circuit is 100% dc and rf tested on wafer to ensure performance compliance. this device is manufactured using a gainp hbt process, including, via holes through the substrate and air bridges. main features 11w output power in pulse mode high gain: > 18db @ 10ghz high pae: 40% @ 10ghz two biasing modes: - digital control thanks to ttl interface - analog control thanks to biasing circuit chip size: 4.9 x 3.68 x 0.1mm 3 in out ti vc vctrl ttl circuit to9 vc vc vctrl to9 vc vc ti vc biasing circuit ttl circuit biasing circuit to8 to8 in out ti vc vctrl ttl circuit to9 vc vc vctrl to9 vc vc ti vc biasing circuit ttl circuit biasing circuit to8 to8 main characteristics vc=9v, ic (quiescent) = 2.1a, pulse width=100s, du ty cycle = 20% symbol parameter min typ max unit top operating temperature range (1) -40 +80 c f_op operating frequency range 9 10.5 ghz p_sat saturated output power @ 25c 12.5 w p_3dbc output power @ 3dbc @ 25c 11 w g_lin linear gain @ 25c 17 18.5 db esd protections: electrostatic discharge sensitive device. observe handling precautions! (1) the reference is the back-side of the chip.
CHA8100 x-band high power amplifier ref : dsCHA81000069 - 10 mar 10 2/12 specifications subject to change without notice route dpartementale 128 , b.p.46 - 91401 orsay ce dex - france tel.: +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 3 3 03 09 electrical characteristics tamb = 25c, vc=9v, ic (quiescent) = 2.1a, pulse wi dth=100s, duty cycle = 20% symbol parameter min typ max unit f_op operating frequency 9 10.5 ghz g_lin linear gain (9 to 10ghz) 17 18.5 db g_lin_t linear gain variation versus temperature - 0.025 db/c rl_in input return loss -9 db rl_out output return loss -15 db p_sat saturated output power 41 dbm p_sat_t saturated output power variation versus temperature -0.01 db/c p_3dbc output power @ 3dbc (3) 39.5 40.5 dbm pae_3dbc power added efficiency @ 3dbc 35 40 % vc power supply voltage (3) 8 9 v ic power supply quiescent current (1) 2.1 a ti ttl input voltage 0 5 v i_ti ttl input current 0.7 ma vctrl collector current control voltage 5 v ictrl control supply current 22 ma zctr vctrl input port impedance (2) 350 ohm top operating temperature range -40 +85 c (1) parameter tunable by vctrl when control biasing circuit used. (2) this value corresponds to the 4 ports in parall el (3) 0.5v variation on vc leads to around 0.4db vari ation of the output power (impact on robustness see maximum ratings) absolute maximum ratings (1) tamb = 25c symbol parameter values unit cmp compression level (2 & 3) 8 db vc power supply voltage (4) 10 v ic power supply quiescent current 3 a ic_sat power supply current in saturation 4 a vctrl collector current control voltage 6.5 v tj maximum junction temperature (5) 175 c tstg storage temperature range -55 to +125 c (1) operation of this device above anyone of these parameters may cause permanent damage. (2) for higher compression the level limit can be r aised by decreasing the voltage vc using the rate 0.5 v / dbc (3) vc=9v, temperature=-40c, output vswr=2:1 (4) without rf input power (5) equivalent thermal resistance to backside: 6c /w
x-band high power amplifier CHA8100 ref. : dsCHA81000069 - 10 mar 10 3/12 specification s subject to change without notice route dpartementale 128 , b.p.46 - 91401 orsay ce dex - france tel.: +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 3 3 03 09 typical measured characteristics measurements on jig : vc = 9v, vttl=5v, ic (quiescent) = 2.1a, pulse widt h=100s, duty cycle = 20% -25 -20 -15 -10 -5 0 5 10 15 20 8.5 8.8 9.0 9.3 9.5 9.8 10.0 10.3 10.5 10.8 11.0 frequency ( ghz) s21/s11/s22 (db) dbs21 dbs11 dbs22 gain/input & output return losses (db). temperature :+20c 7 9 11 13 15 17 19 21 23 25 27 9 9,2 9,4 9,6 9,8 10 10,2 10,4 frequency (ghz) linear gain (db) 85c 25c -40c linear gain versus frequency and temperature
CHA8100 x-band high power amplifier ref : dsCHA81000069 - 10 mar 10 4/12 specifications subject to change without notice route dpartementale 128 , b.p.46 - 91401 orsay ce dex - france tel.: +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 3 3 03 09 33 34 35 36 37 38 39 40 41 42 43 9 9,2 9,4 9,6 9,8 10 10,2 10,4 frequency (ghz) pout @ 3dbc (dbm) 85c 25c -40c output power @ 3 dbc versus frequency and temperature 20 22,5 25 27,5 30 32,5 35 37,5 40 42,5 45 47,5 50 9 9,2 9,4 9,6 9,8 10 10,2 10,4 frequency (ghz) pae @ 3dbc (%) 85c 25c -40c pae @ 3dbc versus frequen cy and temperature
x-band high power amplifier CHA8100 ref. : dsCHA81000069 - 10 mar 10 5/12 specification s subject to change without notice route dpartementale 128 , b.p.46 - 91401 orsay ce dex - france tel.: +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 3 3 03 09 0 0,5 1 1,5 2 2,5 3 3,5 4 4,5 5 9 9,2 9,4 9,6 9,8 10 10,2 10,4 frequency (ghz) ic @ 3dbc (ma) 85c 25c -40c ic @ 3dbc versus frequency and temp erature
CHA8100 x-band high power amplifier ref : dsCHA81000069 - 10 mar 10 6/12 specifications subject to change without notice route dpartementale 128 , b.p.46 - 91401 orsay ce dex - france tel.: +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 3 3 03 09 28 30 32 34 36 38 40 42 0 1 2 3 4 5 6 7 8 compression (db) pout (dbm) 9ghz 9.5ghz 10ghz 10.2ghz 10.5ghz output power @ 25c versus compression and frequency 0 5 10 15 20 25 30 35 40 45 50 0 1 2 3 4 5 6 7 8 compression (db) pae (%) 9ghz 9.5ghz 10ghz 10.2ghz 10.5ghz pae @ 25c versus compression and frequency
x-band high power amplifier CHA8100 ref. : dsCHA81000069 - 10 mar 10 7/12 specification s subject to change without notice route dpartementale 128 , b.p.46 - 91401 orsay ce dex - france tel.: +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 3 3 03 09 0 0,2 0,4 0,6 0,8 1 1,2 1,4 1,6 1,8 2 2,2 2,4 2,6 2,8 3 0 1 2 3 4 5 6 ti/vctrl (v) ic (a) ti -40c ti +20c ti 85c vctrl -40c vctrl +20c vctrl +85c ttl vctrl 2 2,2 2,4 2,6 2,8 3 3,2 3,4 3,6 3,8 4 0 1 2 3 4 5 6 7 8 compression (db) ic (a) 9ghz 9.5ghz 10ghz 10.2ghz 10.5ghz collector current @ 25c versus compression and fr equency collector quiescent current versus ti & vctrl an d temperature
CHA8100 x-band high power amplifier ref : dsCHA81000069 - 10 mar 10 8/12 specifications subject to change without notice route dpartementale 128 , b.p.46 - 91401 orsay ce dex - france tel.: +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 3 3 03 09 0 5 10 15 20 25 30 35 40 0 1 2 3 4 5 6 vctrl (v) ictrl (ma) -40c +20c +85c control current versus control voltag e & temperatu re i_ti f(ti ) 0 0,2 0,4 0,6 0,8 1 1,2 0 1 2 3 4 5 6 ti (v) i_ti (ma) -40c +20c +85c ttl input current versus ttl voltage and temperatur e
x-band high power amplifier CHA8100 ref. : dsCHA81000069 - 10 mar 10 9/12 specification s subject to change without notice route dpartementale 128 , b.p.46 - 91401 orsay ce dex - france tel.: +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 3 3 03 09 chip mechanical data and pin references units: m chip width and length are given with a tolerance of 35m chip thickness = 100m +/- 10 m rf pads (1, 12) = 96 x 196m2 dc pads (2, 3, 4, 5, 6, 7, 9,10, 14, 15, 17, 18, 19 , 20, 21, 22) = 96 x 96m2 dc pads (8, 16) = 192 x 96m2 dc pads (11, 13) = 288 x 96m2 pin number pin name description 1 in input rf 7, 9, 15, 17 c1, c2 collector current control volta ge 2, 22 ti ttl input 4, 20 to9 ttl output when vcx=9v 5, 19 to8 ttl output vcx=8v 6, 10, 14, 18 gnd ground (nc) 3, 8, 11, 13, 16, 21 v,vc1,vc2 power supply voltage 12 out output rf 1 12
CHA8100 x-band high power amplifier ref : dsCHA81000069 - 10 mar 10 10/12 specification s subject to change without notice route dpartementale 128 , b.p.46 - 91401 orsay ce dex - france tel.: +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 3 3 03 09 bonding recommendations for thermal and electrical considerations, the chip should be brazed on a metal base plate. the rf, dc and modulation port inter-connections sh ould be done according to the following table: port connection in (1) inductance (lbonding) = 0.3nh 400m length with wire diameter of 25 m x2 out (12) inductance (lbonding) = 0.3nh 400m length with wire diameter of 25 m x2 dc pads to 1 st decoupling level for double bonding inductance (lbonding) =0.7nh two 1.2mm length wires with a diameter of 25 m dc pads to 1 st decoupling level for single bonding inductance (lbonding) =1nh one 1.2mm length wires with a diameter of 25 m 1 st decoupling level to 2 nd decoupling level for double bonding inductance (lbonding) =0.7nh two 1.2mm length wires with a diameter of 25 m 1 st decoupling level to 2 nd decoupling level for single bonding inductance (lbonding) =1nh one 1.2mm length wires with a diameter of 25 m assembly recommendations in test fixture (using analogue biasing circuits) 22 21 20 19 17 16 15 14 18 13 2 3 4 5 7 8 9 10 6 11 12 1 in out vc vctrl 100pf 10nf 1f 100f vc vctrl 22 21 20 19 17 16 15 14 18 13 2 3 4 5 7 8 9 10 6 11 12 1 in out vc vctrl 100pf 10nf 1f 100f vc vctrl 22 21 20 19 17 16 15 14 18 13 2 3 4 5 7 8 9 10 6 11 12 1 in out vc vctrl 100pf 10nf 1f 100f 100pf 10nf 1f 100f vc vctrl note: supply feed should be capacitively by-passed. 25m diameter gold wire is to be preferred.
x-band high power amplifier CHA8100 ref. : dsCHA81000069 - 10 mar 10 11/12 specificatio ns subject to change without notice route dpartementale 128 , b.p.46 - 91401 orsay ce dex - france tel.: +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 3 3 03 09 assembly recommendations in test fixture (using ttl circuits) * performances obtained with the same accesses conn ected to the same supply note: supply feed should be capacitively by-passed. 25m diameter gold wire is to be preferred. biasing possibilities ttl / vcontrol vc 1 , vc 2 , v connections biasing via ttl interface 9v to9 connected to c1 and c2 c2 & t08 not connected biasing via ttl interface 8v to8 connected to c1 and c2 c2 & t09 not connected biasing via analogue control device 9v or 8v c2,v, ti, to8, to9 not connected
CHA8100 x-band high power amplifier ref : dsCHA81000069 - 10 mar 10 12/12 specification s subject to change without notice route dpartementale 128 , b.p.46 - 91401 orsay ce dex - france tel.: +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 3 3 03 09 recommended esd management refer to the application note an0020 available at http://www.ums-gaas.com for esd sensitivity and handling recommendations for the um s products. ordering information chip form : CHA8100-99f/00 information furnished is believed to be accurate an d reliable. however united monolithic semiconductors s.a.s. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by impli cation or otherwise under any patent or patent rights of united monolithic semiconductors s.a.s. . specifications mentioned in this publication are subject to change without notice. this publication supersedes and re places all information previously supplied. united monolithic semiconductors s.a.s. products are not authorised for use as critical components in life support devices or s ystems without express written approval from united monolithic semiconductors s.a.s.

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